| 发明名称 |
METHOD FOR MANUFACTURE OF A SEMICONDUCTOR DEVICE |
| 摘要 |
<p>A semiconductor device and method of making the same is disclosed having a surface passivation film of a polycrystalline silicon layer containing 2 to 45 atomic percent of oxygen atoms. The polycrystalline silicon layer is locally electrically insulated by oxidizing throughout the thickness of the layer. The local oxidizing treatment causes the polycrystalline or silicon layer to pattern.</p> |
| 申请公布号 |
CA1052476(A) |
申请公布日期 |
1979.04.10 |
| 申请号 |
CA19760247703 |
申请日期 |
1976.03.11 |
| 申请人 |
SONY CORPORATION |
发明人 |
AOKI, TERUAKI;ABE, MOTOAKI |
| 分类号 |
H01L29/78;H01L21/00;H01L21/316;H01L21/331;H01L21/336;H01L29/00;H01L29/73;(IPC1-7):01L21/322;01L21/76 |
主分类号 |
H01L29/78 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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