发明名称 THICKNESS SLIP OSCILLATOR
摘要 PURPOSE:To reject the electric field strain at the edge and to prevent the frequency variation of the main oscillation, lowering in the Q value and the change in the temperature characteristics and so on, by locating the electrodes of the equipotential at the end toward X axis, in the AT cut crystal oscillator or the like. CONSTITUTION:The major electrodes 9 and 9' are formed on a pair of X-Z' planes of the oscillator 8, and the lead electrodes 10 and 10' extended from the main electrodes 9 and 9' are respectively formed up to a part of the X'-Z' planes opposing each other via the Y'-Z' plane, and they are bonded with the support at the ends 11, 12 of the oscilltor 8 and the both Y'-Z' planes. Thus, since the ends 11, 12 toward X axis are made equi-potential with the lead electrodes 10, 10', no strain due to electric field is caused and it is always stable, and the support of the oscillator is made easy by increasing the energy enclosing effect. Further, the mass of electrode is greater and the suppression effect of the sprious oscillation due to added mass effect can be increased.
申请公布号 JPS5444490(A) 申请公布日期 1979.04.07
申请号 JP19770110692 申请日期 1977.09.14
申请人 SEIKO INSTR & ELECTRONICS 发明人 HIGASHICHI SEIJI
分类号 H03H9/19;H03H9/17 主分类号 H03H9/19
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