| 摘要 |
PURPOSE:To obtain constant voltage on source electrode and to widen voltage range by utilizing pinch-off voltage of diplession type bipolar transistor and insulated gate FET. CONSTITUTION:Diplession type (bipolar transistor, insulated gate type field effect transistor MISFET) having gate electrode connected to referential voltage terminal G is provided between source voltage line of circuit block 2 and source voltage supply terminal V in monolithic semiconductor integrated circuit 1, and source voltage of said MISFET is used as source voltage of circuit block 2. With such arrangement when absolute voltage at source supply terminal V is higher than threshold level of MISFET, MISFET functions in saturated resin thereby source voltage is made constant irrespective of the voltage on source supply terminal V. |
