发明名称 SEMICONDUCTOR ELEMENT
摘要 <p>The main electrodes are provided on the thyristor semiconductor substrate. Each electrode is connected to a supply current electrode. To the semiconductor substrate (1) is associated a conductor whose current is of opposite direction, at least in the section (13) nearest to the substrate, to that flowing through the substrate. Preferably the conductor is formed by one of the supply current electrodes (5, 6). Alternately the conductor may carry auxiliary current. The near section of the conductor may be adjacent to the control electrode (7), centrally located on the substrate. Both the control electrode and substrate may have coaxial apertures (9, 10), through which passes the supply current electrode (6) for connection to the main electrode (2) at anode side.</p>
申请公布号 JPS5443687(A) 申请公布日期 1979.04.06
申请号 JP19780102249 申请日期 1978.08.22
申请人 SIEMENS AG 发明人 HORUSUTO GEEMU
分类号 H01L29/861;H01L23/49;H01L29/06;H01L29/417;H01L29/423;H01L29/744 主分类号 H01L29/861
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