| 摘要 |
<p>This invention relates to an invertor with a lateral bipolar pnp(npn) transistor and a vertical, bipolar npn (pnp) transistor which vertical transistor has at least one collector. The collector of the lateral transistor is connected with the base of the vertical transistor. The emitter of the vertical transistor is connected to one terminal of a supply voltage source, and the emitter of the lateral transistor is connected to the other terminal of the supply voltage source. A resistance is connected between the base of the lateral transistor and the said one terminal of the supply voltage source. The inverter is formed in an integrated circuit which includes a semiconductor substrate in which both a pnp (npn) lateral transistor and an npn (pnp) vertical transistor are formed in an epitaxial layer which has been deposited on the substrate. A portion of the base of the lateral transistor forms the emitter of the vertical transistor. A portion of the collector of the lateral transistor forms the base of the vertical transistor. The emitter of the vertical transistor is located as a buried layer, while the collectors of the vertical transistor are located at the surface of the epitaxial layer.</p> |
