| 发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT ELEMENT |
| 摘要 |
<p>PURPOSE:To increase the circuit integration, by taking the external diameter of the electrodes of wiring smaller than that of the external electrodes, and by providing the operation region and the element wiring under or near the external electrodes via the insulation film.</p> |
| 申请公布号 |
JPS5441666(A) |
申请公布日期 |
1979.04.03 |
| 申请号 |
JP19770107748 |
申请日期 |
1977.09.09 |
| 申请人 |
HITACHI LTD |
发明人 |
KANZAWA RIYOUSAKU;TSUKUDA KIYOSHI;KAMEI TATSUYA |
| 分类号 |
H01L21/60;H01L21/3205;H01L23/52 |
主分类号 |
H01L21/60 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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