发明名称 |
Method for forming p-n junctions and solar-cells by laser-beam processing |
摘要 |
This invention is an improved method for preparing p-n junction devices, such as diodes and solar cells. High-quality junctions are prepared by effecting laser-diffusion of a selected dopant into silicon by means of laser pulses having a wavelength of from about 0.3 to 1.1 mu m, an energy area density of from about 1.0 to 2.0 J/cm2, and a duration of from about 20 to 60 nanoseconds. Initially, the dopant is deposited on the silicon as a superficial layer, preferably one having a thickness in the range of from about 50 to 100 A. Depending on the application, the values for the above-mentioned pulse parameters are selected to produce melting of the silicon to depths in the range from about 1000 A to 1 mu m. The invention has been used to produce solar cells having a one-sun conversion efficiency of 10.6%, these cells having no antireflective coating or back-surface fields.
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申请公布号 |
US4147563(A) |
申请公布日期 |
1979.04.03 |
申请号 |
US19780932154 |
申请日期 |
1978.08.09 |
申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE UNITED STATES DEPARTMENT OF ENERGY |
发明人 |
NARAYAN, JAGDISH;YOUNG, ROSA T. |
分类号 |
H01L31/04;H01L21/22;H01L21/225;H01L21/268;H01L31/18;(IPC1-7):H01L21/26;H01L21/26 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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