| 发明名称 |
Semiconductor apparatus |
| 摘要 |
A field-effect transistor device is provided having a relatively substantial capability to withstand reverse bias voltages. The device can also be provided having a relatively low "on" condition resistance between the source and drain terminals thereof by virtue of the geometrical design used.
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| 申请公布号 |
US4148046(A) |
申请公布日期 |
1979.04.03 |
| 申请号 |
US19780869977 |
申请日期 |
1978.01.16 |
| 申请人 |
HONEYWELL INC. |
发明人 |
HENDRICKSON, THOMAS E.;HUANG, JACK S. T. |
| 分类号 |
H01L21/822;H01L27/04;H01L29/06;H01L29/417;H01L29/45;H01L29/78;(IPC1-7):H01L29/72 |
主分类号 |
H01L21/822 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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