Semiconductor storage cell using two bipolar transistors - which are formed in common substrate together with coupling diodes and resistors

摘要

The storage cell uses two bipolar transistor (T1, T2) the collector of each coupled via a diode (D1, D2) bridged by a resistor (RP1, RP2) to a common terminal, each parallel diode and resistor also coupled to the base of the opposite transistor. The two transistors (T1, T2) and the two didoes (D1, D2) are formed in the surface of a common substrate. The mean value of the distance of the like junction of each diode (D1, D2e from the outer collector pn junction of the associated transistor (T1, T2) is less than the mean value of the spacing of this pn junction from the base/collector junction of this transistor. A channel filled with insulating material is formed in the surface of the substrate between the collector zones of both transistors (T1, T2) and with a surface insulating providing the resistor (RP1, RP2) for each diode (D1, D2).