发明名称 Method for forming an aluminum interconnect structure on an integrated circuit chip
摘要 A method for forming an interconnect structure on an integrated circuit chip by employing a single chamber for both the required etching and anodization. It has been discovered that an etchant-electrolyte such as phosphoric acid solution in the ratios of one part phosphoric acid to four parts of water can serve as both an etchant and an electrolyte without causing deterioration of the photoresist pattern representing the interconnect structure.
申请公布号 US4146440(A) 申请公布日期 1979.03.27
申请号 US19780892943 申请日期 1978.04.03
申请人 BURROUGHS CORPORATION 发明人 THOMPSON, CHARLES E.
分类号 H01L21/3205;C25D11/04;C25D11/12;C25F3/04;H01L21/28;H01L21/3063;H01L21/3213;(IPC1-7):C25D11/04 主分类号 H01L21/3205
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