A method of fabricating gallium arsenide MOS devices with improved stoichiometric and electrical properties is disclosed. The device includes a gallium arsenide substrate overlaid with a native oxide and an aluminum oxide layer. The device is fabricated using a plasma oxidizing process.
申请公布号
US4144634(A)
申请公布日期
1979.03.20
申请号
US19770810771
申请日期
1977.06.28
申请人
BELL TELEPHONE LABORATORIES, INCORPORATED
发明人
CHANG, CHUAN C.;CHANG, ROBERT P. H.;COLEMAN, JAMES J.;SHENG, TAN T.