POWER TRANSISTOR HAVING IMPROVED SECOND BREAKDOWN CAPABILITY

摘要

POWER TRANSISTOR HAVING IMPROVED SECOND BREAKDOWN CAPABILITY A high voltage power transistor of the type that includes emitter, base and collector regions of alternate conductivity types and PN junctions at the interface of the emitter and base regions, and at the interface of the base and collector regions. The improvement being an emitter region having at least a plurality of spaced elongated finger-like portions; a means in the base region to lower the base resistance in the transverse direction, this means located centrally beneath the finger-like portions of the emitter and comprised either of regions of low resistivity located centrally and beneath each of the finger-like portions, or regions of increased base thickness in the vertical direction also located centrally beneath each of the finger-like portions of the emitter.