发明名称 Method for enhancing the crystallization rate of high purity amorphous Si{hd 3{b N{HD 4 {B powder, powders produced thereby and products therefrom
摘要 High purity, fine Si3N4 powder produced by the vapor phase reaction of SiCl4 with NH3 is amorphous. The crystallization rate of the amorphous powder is enhanced by heating the powder while in intimate contact with a titanium containing material, for example, TiN codeposited with the Si3N4 by the simultaneous reaction of TiCl4 with NH3.
申请公布号 US4145224(A) 申请公布日期 1979.03.20
申请号 US19740526257 申请日期 1974.11.22
申请人 GTE SYLVANIA INCORPORATED 发明人 MEHALCHICK, EMIL J.;KLEINER, RICHARD N.
分类号 C01B21/068;C04B35/584;C04B35/593;(IPC1-7):C04B35/58 主分类号 C01B21/068
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