发明名称 DISPOSITIVO E CONJUNTO SEMICONDUTOR
摘要 A semiconductor device comprises a heat-radiating electrode plate, a semiconductor element soldered to the depressed portion formed in the heat-radiating electrode plate, a header lead soldered onto the semiconductor element, a terminal board of insulating material fixed on the heat-radiating electrode plate, and a lead terminal secured to the terminal board and with the one end thereof electrically and mechanically connected to the header lead. The semiconductor device further comprises means for mitigating the transmission to the solder of the stress generated along the length of the header lead by the difference in the coefficient of thermal expansion among the component parts, and means for alleviating the lateral stress generated in the solder by the difference in the coefficient of thermal expansion between the header lead and the semiconductor element. Thus, a semiconductor device is provided which is high in both resistance to thermal fatigue and vibrations, simple in construction and superior in operational efficiency.
申请公布号 BR7803561(A) 申请公布日期 1979.03.20
申请号 BR19787803561 申请日期 1978.06.02
申请人 HITACHI LTD;HITACHI HARAMACHI SEMI CONDUTOR LTD 发明人 SAKAUE T;NAKAJIMA M;NARITA K;KAWASAKI N
分类号 H01L23/433;H01L23/49;H01L25/07 主分类号 H01L23/433
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