| 摘要 |
In a semiconductor laser with light guide, wherein an active region to form the Fabry-Perot cavity is formed in a mesa part on a semiconductor substrate and mixed crystal semiconductor parts formed to fill the mesa-etched parts constitute light guides. The improvement is that a crystal semiconductor of the active region has the composition of Ga1-xAlxAs (0</=x<1) and a mixed crystal of the light guide has the composition of GaAs1-yPy (0<y<1) or Ga1-zAlzAs (0<x<z<1) of sufficiently high (for instance, 104 OMEGA cm) specific resistivity with respect to that of the active region, the value of y or z being selected to be smallest at a depth of the light guide where the lasing light is incident, and the energy gap of the mixed crystal part being selected to be larger than that of said active region, so that light loss in the light guide is decreased.
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