| 发明名称 |
P{HU {30 {0 {B Buried layer for I{HU 2{B L isolation by ion implantation |
| 摘要 |
A selected transistor in an integrated circuit formed in an N-type substrate is isolated from the substrate and from other transistors formed therein by surrounding an N-type island within the substrate with a P-type shell and forming the selected transistor in and above the N-type island.
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| 申请公布号 |
US4144098(A) |
申请公布日期 |
1979.03.13 |
| 申请号 |
US19770791912 |
申请日期 |
1977.04.28 |
| 申请人 |
HUGHES AIRCRAFT COMPANY |
发明人 |
ROESNER, BRUCE B. |
| 分类号 |
H01L21/265;H01L21/761;H01L21/764;H01L27/02;(IPC1-7):H01L27/04;H01L21/26;H01L21/22;H01L29/72 |
主分类号 |
H01L21/265 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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