发明名称 AUTOMATIC ETCHING UNIT FOR SEMICONDUCTOR COMPOSITE
摘要 PURPOSE:To increase the performance of semiconductor elements and yield rate, by measuring the hydrazine concentration added in the etching solution with a trace with the current value of the constant potential electrolyte taking platinum for the both electrodes, and by always the amount of hydrazine addition within optimum range.
申请公布号 JPS5433673(A) 申请公布日期 1979.03.12
申请号 JP19770099493 申请日期 1977.08.22
申请人 HITACHI LTD 发明人 OKAJIMA YOSHIAKI;KOYAMA SUSUMU
分类号 H01L21/306 主分类号 H01L21/306
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