| 摘要 |
1474846 Opto-electronic devices SIEMENS AG 18 April 1975 [8 May 1974] 16015/75 Heading H1K An opto-electronic coupling device comprises, in a single semiconductor body, an electroluminescent diode 1, on electrically insulating light-transmission region 2 and a photodiode 3, the diode 1 and region 2 both being made of GaAs or a mixed crystal thereof and the energy bandgap in region 2 being greater than that is diode 1. In the embodiment shown the electroluminescent diode 1 is made of Ga 0À9 Al 0À1 As, having a Zn-doped p region 11 and a Te-doped n region 12. The region 2 is of Ga 0À8 Al 0À2 As having a resistivity of 10<SP>6</SP>-10<SP>8</SP> ohm cm, although in a modification the Ga : Al ratio may be graded across the region 2 so that the bandgap decreases towards the diode 1. The photodiode 3 is of GaAs, having a Te or Sn-doped n region 31 and a Zn-doped p region 32. Electrodes 6 of Au/Ga or Au/Mn, optionally in etched recesses, are applied to the regions of diodes 1 and 3. |
