发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To make it possible to manufacture a semiconductor device at high yield without any curvature of the substrate, by forming electrodes on both surfaces of the semiconductor substrate by separating the substrate, formed in a mesa shape, along the mesa-shaped bottom part.</p>
申请公布号 JPS5432968(A) 申请公布日期 1979.03.10
申请号 JP19770099738 申请日期 1977.08.19
申请人 MATSUSHITA ELECTRONICS CORP 发明人 MIYAI YUKIO
分类号 H01L47/02;H01L21/301;H01L21/302;H01L21/306;H01L21/78;H01L29/864 主分类号 H01L47/02
代理机构 代理人
主权项
地址