发明名称 HARD MASK FOR ELECTRON BEAM
摘要 PURPOSE:To form a mask by stacking a multi-layer conductive layer, which can be selective etched, on a glass substrate, by making an upper-layer pattern into an etching-proof mask through a size measurement immediately after the formation, and by etching the lower-layer pattern.
申请公布号 JPS5432976(A) 申请公布日期 1979.03.10
申请号 JP19770099752 申请日期 1977.08.19
申请人 MITSUBISHI ELECTRIC CORP 发明人 KATOU TADAO;HATSUHARA TOSHIHIKO
分类号 H01L21/027;G01B15/00;G03F1/00;G03F1/76;G03F1/84;G03F1/86;H01L21/302;H01L21/66 主分类号 H01L21/027
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