| 摘要 |
A high storage capacity, fast access time, photovoltaic ferroelectric memory apparatus including a plurality of memory planes (1) which are stacked in a three dimensional configuration. Each plane is comprised of a photovoltaic ferroelectric layer (9) and a photoconductive layer (10) sandwiched between two electrodes (8), (11). Writing of information is effected by illuminating a selected xy location on the planes while simultaneously applying a voltage pulse to a selected z plane, and reading is effected by illuminating a selected xy location while connecting a selected z plane to a read amplifier. |
