| 发明名称 |
CHARGE TRANSFER SEMICONDUCTOR DEVICE |
| 摘要 |
PURPOSE:To attain higher transfer efficiency and higher speed, higher density for the integrated circuit, by making a part of source-drain region the source side to have high impurity concentration and dividing source - drain region into two regions. |
| 申请公布号 |
JPS52104880(A) |
申请公布日期 |
1977.09.02 |
| 申请号 |
JP19760020621 |
申请日期 |
1976.02.28 |
| 申请人 |
NIPPON TELEGRAPH & TELEPHONE |
发明人 |
KIKUCHI HIROYUKI;MANO TSUNEO |
| 分类号 |
H01L29/762;H01L21/339;H01L27/105 |
主分类号 |
H01L29/762 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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