SETT ATT FRAMSTELLA ETT ISOLATIONSGALLER I EN KROPP AV HALVLEDARMATERIAL

摘要

An isolation grid is produced by the migration of metal-rich liquid zone of material through a body of semiconductor material. Planar orientation of the surface through which migration is initiated, directions of wire alignment in the surface, wire sizes, direction of wire migration and simultaneous migration of intersecting liquid wires are disclosed herein. P-N junctions of the grid produced behind the migrated wires have ideal voltage breakdown characteristics.