FET esp. metal-semiconductor FET - has two gate electrodes both controlling source-drain current in gallium arsenide substrate

摘要

The field effect transistor has an s-c substrate with a source electrode and a drain electrode inside a substrate zone and at least two gate electrodes each controlling the current flowing between the source and drain electrodes. The FET may be a metal-semiconductor FET, in which case each gate electrode forms a Schottky junction contact in the substrate zone. The substrate is pref. of gallium arsenide. The two gate electrodes are arranged so that they control all the current flowing between source and drain.