Epitaxial silicon deposition - in closed vessel with constant temp. gradient across line of substrates

摘要

In a system for the epitaxial deposition of silicon on many substrates in series by using a silicon-iodine transport system, the substrates are arranged in an enclosed vessel in such a way that a constant temp. gradient is present across their line. The substrates further away from the Si source are on a lower temp. level than those nearer to it but the temp. gradient across them all is 0.5 to 1.5 (1) Kelvin/cm. Process ensures the same deposition rate for all substrates and epitaxial layers of equal thickness.