发明名称 Polychromatic monolithic semiconductor assembly
摘要 Polychromatic assembly comprising several electroluminescent semiconductor diodes that are formed by diffusion of islands localized in superimposed epitaxial layers, which layers are of different compositions and are deposited on a semiconductor substrate or a semi-insulator, each epitaxial layer having a forbidden bandwidth smaller than that of the layer below which it is present.
申请公布号 US4142196(A) 申请公布日期 1979.02.27
申请号 US19770861650 申请日期 1977.12.19
申请人 U.S. PHILIPS CORPORATION 发明人 DIGUET, DANIEL;GAFFRE, MICHEL
分类号 H01L33/00;(IPC1-7):H01L33/00 主分类号 H01L33/00
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