发明名称 |
Polychromatic monolithic semiconductor assembly |
摘要 |
Polychromatic assembly comprising several electroluminescent semiconductor diodes that are formed by diffusion of islands localized in superimposed epitaxial layers, which layers are of different compositions and are deposited on a semiconductor substrate or a semi-insulator, each epitaxial layer having a forbidden bandwidth smaller than that of the layer below which it is present.
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申请公布号 |
US4142196(A) |
申请公布日期 |
1979.02.27 |
申请号 |
US19770861650 |
申请日期 |
1977.12.19 |
申请人 |
U.S. PHILIPS CORPORATION |
发明人 |
DIGUET, DANIEL;GAFFRE, MICHEL |
分类号 |
H01L33/00;(IPC1-7):H01L33/00 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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