发明名称 |
One-transistor fully static semiconductor memory cell |
摘要 |
A cell for a semiconductor memory of the static type employs only one conventional MOS transistor, along with a field implanted resistance and a vertical P-channel junction-type field effect transistor. These elements, along with a resistor element which may be another field implanted resistance or a polysilicon implanted resistance, provide a circuit which is stable with either a "1" or "0" stored. No clock or other refresh circuitry is needed.
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申请公布号 |
US4142111(A) |
申请公布日期 |
1979.02.27 |
申请号 |
US19770762916 |
申请日期 |
1977.01.27 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
MCELROY, DAVID J. |
分类号 |
G11C11/41;G11C11/39;G11C11/412;H01L21/822;H01L21/8244;H01L27/04;H01L27/10;H01L27/11;H03K3/356;(IPC1-7):H03K3/35;G11C11/34 |
主分类号 |
G11C11/41 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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