SEMICONDUCTOR RECTIFIER

摘要

When semiconductor rectifiers are subject to surge loads in the blocking direction, transit time oscillations may occur with a frequency of several 100 MHz, which can lead to the destruction of the rectifier in the case of power losses which should not in themselves be sufficient to cause destruction. By the installation of finely distributed regions of the opposite conductivity type into the highly doped outer cathode zone, it is possible to greatly attenuate such oscillations. Higher power losses are thus attained.