发明名称 Method of fabricating an improved substrate fed logic utilizing graded epitaxial deposition
摘要 An integrated circuit having a substrate of a first conductivity type, a first layer of opposite conductivity type thereon and a second layer of said first conductivity type inversely graded on said first layer and including a heavily doped region adjacent the surface opposite said first layer. A ring of said opposite conductivity type extends through said second layer and partially into said first layer and a diffused region of said opposite conductivity type is in the surface of said second layer.
申请公布号 US4140559(A) 申请公布日期 1979.02.20
申请号 US19770865658 申请日期 1977.12.29
申请人 HARRIS CORPORATION 发明人 VAN VONNO, NICOLAAS W.
分类号 H01L21/8222;H01L21/8226;H01L27/02;(IPC1-7):H01L21/20 主分类号 H01L21/8222
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