| 摘要 |
<p>: The invention relates to field effect transistors (FETs), particularly vertical FETs. The invention provides a field effect transistor comprising a body of semiconductor material, a source electrode, a drain electrode and a gate electrode formed on the body so as to define a current channel between the source and the drain electrodes, the conductance of the channel being controlled by voltage applied to the gate electrode. The body includes a portion having a pair of major surfaces. A wider bandgap active layer is epitaxially grown on, and subsequently lattice matched to, one of the surfaces, and a narrower bandgap mesa is formed on and subsequently lattice matched to, the active layer. A drain electrode is formed on the mesa and the source electrode is formed on the other major surface of the portion. The gate electrode comprises a pair of elongated stripes formed on the active layer adjacent both sides of the mesa.</p> |
