| 摘要 |
A plurality of floating regions of a charge transfer device, such as the floating gates of a charge-coupled device (CCD), connected to a corresponding number of output gates to form potential wells beneath these output gates whose depths are charge signal dependent. Control gates selectively couple each well to one of two output regions of opposite conductivity type than the substrate and the selected output regions and output gates are operated in one of a number of possible "fill and spill" modes to produce output signals. One of the output regions at an output gate location, when selected, is employed to produce an output signal proportional to charge and the other, when selected, is employed to produce the complement of the output signal.
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