发明名称 |
Method of producing a monocrystalline layer on a substrate |
摘要 |
A monocrystalline layer is vapor-deposited on a substrate surface while substantially simultaneously such surface is irradiated with an ion beam having ions with a kinetic energy of at least 10 keV. The resultant ion current impinging on the substrate surface is controlled in such a manner that the sum of the vaporization rate and sputtering rate caused by such ions is smaller than the combined condensation rate of such ions and vaporized particles.
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申请公布号 |
US4140546(A) |
申请公布日期 |
1979.02.20 |
申请号 |
US19770825246 |
申请日期 |
1977.08.17 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
KRIMMEL, EBERHARD |
分类号 |
C01B33/02;C30B23/08;H01L21/203;H01L21/208;(IPC1-7):H01L21/20;H01L21/36 |
主分类号 |
C01B33/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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