发明名称 Method of producing a monocrystalline layer on a substrate
摘要 A monocrystalline layer is vapor-deposited on a substrate surface while substantially simultaneously such surface is irradiated with an ion beam having ions with a kinetic energy of at least 10 keV. The resultant ion current impinging on the substrate surface is controlled in such a manner that the sum of the vaporization rate and sputtering rate caused by such ions is smaller than the combined condensation rate of such ions and vaporized particles.
申请公布号 US4140546(A) 申请公布日期 1979.02.20
申请号 US19770825246 申请日期 1977.08.17
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人 KRIMMEL, EBERHARD
分类号 C01B33/02;C30B23/08;H01L21/203;H01L21/208;(IPC1-7):H01L21/20;H01L21/36 主分类号 C01B33/02
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