| 发明名称 |
MANUFACTURE OF SEMICONDUCTOR DEVICE |
| 摘要 |
PURPOSE:To prevent the field concentration and thus to avoid the deterioration of the memory holding property for the double-gate type nonvolatile memory by securing such structure that causes no overhang at the periphery of the floating gate. |
| 申请公布号 |
JPS5422782(A) |
申请公布日期 |
1979.02.20 |
| 申请号 |
JP19770087282 |
申请日期 |
1977.07.22 |
| 申请人 |
TOKYO SHIBAURA ELECTRIC CO |
发明人 |
TAKESHITA YUUJI |
| 分类号 |
H01L23/522;H01L21/768;H01L21/8247;H01L29/417;H01L29/788;H01L29/792 |
主分类号 |
H01L23/522 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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