| 发明名称 |
MANUFACTURE OF SEMICONDUCTOR DEVICE |
| 摘要 |
PURPOSE:To obtain complementary J-FET of a highly integrated degree, which can feature a high-speed operation in low power by providing both the vertical and horizontal FET's onto the same semiconductor substrate. |
| 申请公布号 |
JPS5422176(A) |
申请公布日期 |
1979.02.19 |
| 申请号 |
JP19770087119 |
申请日期 |
1977.07.20 |
| 申请人 |
SEIKO INSTR & ELECTRONICS |
发明人 |
IWAUCHI SHIGEKI |
| 分类号 |
H01L29/80;H01L21/22;H01L21/337;H01L27/098;H01L29/808 |
主分类号 |
H01L29/80 |
| 代理机构 |
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代理人 |
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| 地址 |
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