发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE:To obtain a semiconductor drvice which features a structure highly resistant to the thermal shock and the heat fatugue by installing a metal layer to reduce or block the copper diffusion velocity onto the copper or the copper alloy substrate.
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申请公布号 |
JPS5422163(A) |
申请公布日期 |
1979.02.19 |
申请号 |
JP19770086653 |
申请日期 |
1977.07.21 |
申请人 |
TOKYO SHIBAURA ELECTRIC CO |
发明人 |
HATSUTORI TSUKASA;USUDA OSAMU;BABA HIROYUKI |
分类号 |
H01L21/52;H01L21/58;H01L23/12 |
主分类号 |
H01L21/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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