发明名称 |
BIPOLAR MOS SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND THE SAME |
摘要 |
PURPOSE:To increase the scale of integration and obtain low noise characteristics by forming bipolar and MOS elements on one semiconductor substrate by using multilayer epitaxial growth techniques in place of well regions through ion implantation. |
申请公布号 |
JPS5420679(A) |
申请公布日期 |
1979.02.16 |
申请号 |
JP19770085065 |
申请日期 |
1977.07.18 |
申请人 |
HITACHI LTD |
发明人 |
NIINO KAORU |
分类号 |
H01L29/78;H01L21/331;H01L21/8249;H01L27/06;H01L29/73 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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