发明名称 Converting dielectric material to (semi)conductive material - by heat treating in a plasma, esp. created by HF alternating electromagnetic field
摘要 <p>Converting a dielectric material into a conductive or semiconductive material and vice versa, includes a step of treating the material at a temp. below T degree C (the known transition temp. for the material usually >500 degrees C), during which the material is held in an ionised gas esp. a plasma reducer or oxidiser created by an HF alternating electromagnetic field. The materials to be treated are esp. TiO2, LiNbO3, LiTaO3 or SrTiO3. The treatment time may be considerably reduced along with the lower temp. hence the crystalline body is not necessarily greatly disturbed by the heat treatment as in prior art, while dopants do not diffused out of their designed regions.</p>
申请公布号 FR2398385(A1) 申请公布日期 1979.02.16
申请号 FR19770022564 申请日期 1977.07.22
申请人 THOMSON CSF 发明人 NICOLAS SZYDLO ET GONZALO VELASCO;VELASCO GONZALO
分类号 C04B41/00;C25B1/00;H01B1/08;H01C17/26;H01J37/32;(IPC1-7):01L21/324;01C17/26 主分类号 C04B41/00
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