摘要 |
<p>Converting a dielectric material into a conductive or semiconductive material and vice versa, includes a step of treating the material at a temp. below T degree C (the known transition temp. for the material usually >500 degrees C), during which the material is held in an ionised gas esp. a plasma reducer or oxidiser created by an HF alternating electromagnetic field. The materials to be treated are esp. TiO2, LiNbO3, LiTaO3 or SrTiO3. The treatment time may be considerably reduced along with the lower temp. hence the crystalline body is not necessarily greatly disturbed by the heat treatment as in prior art, while dopants do not diffused out of their designed regions.</p> |