ELECTROLUMINESCENT SEMICONDUCTOR DEVICE

摘要

1503545 Semi-conductor devices PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 9 June 1975 [12 June 1974] 24621/75 Heading H1K An electroluminescent semi-conductor device has a monocrystalline semi-conductor body 1 of a III-V compound and comprises a doped region 2 which forms a PN junction 4 with an adjacent region 3, and a tin-doped indium oxide current conducting layer 5 whose sheet resistance is at most one third that of the doped region 2. The layer 5 forms a transparent electrode on a silicon oxide or nitride layer 6 and in an aperture 7 therein. A gold wire 9 is contacted with a bismuth oxide layer on the indium oxide layer 5 by thermocompression bonding. In an alternative embodiment the doped region 2 extends over the entire surface of the semiconductor body 1.