| 摘要 |
<p>Inclusion of two or more sense amplifiers in a column of a solid state memory. In one embodiment, and additional sense amplifier (100) is provided on each column of a dynamic access memory (RAM). In other embodiment, a static memory has two or more sense amplifiers (S311, S321) located along a column. The sense amplifiers may be activated by the same column access strobe (CAS) pulse may be activated sequentially by separate strobe pulses (T1, T2). Other implementations of the present technique in ROMs, EPROMS, etc. are possible. The additional sense amplifiers provide improved signal transfer speed.</p> |
