| 摘要 |
PURPOSE:To obtain the titled element excellent in high frequency characteristic by preventing reverse leakage currents by a method wherein the barrier height of the first metal to a semiconductor substrate is made larger than that of the second metal, and the silicide-forming temperature of the first metal is made heigher than that of the second metal. CONSTITUTION:The first metal layer 8 forming a Schottky barrier is adhered in ring form by evaporation or the like on the semiconductor substrate 1 along the inner peripheral edge of an insulation film 5, and is thereafter silicified on heat treatment at a silcide-forming temperature into a guard ring. Further, the second metal layer 9 forming a Schottky barrier is silicide-formed in the region surrounded by the first metal layer 8. Then, the first and second metals are set in such a manner that the barrier height of the first metal to the semidonductor substrate 1 becomes heigher than that of the second metal to the substrate 1. Moreover, the silicide-forming temperature of the first metal layer 8 is made heigher than that of the second metal layer 9. |
