WERKWIJZE VOOR HET VERVAARDIGEN VAN EEN GEINTEGREERDE HALFGELEIDERSCHAKELING MET VAN EEN GEISOLEERDE STUURELEKTRODE VOORZIENE VELDEFFECTTRANSISTOREN.

摘要

In connection with the fabrication of an integrated circuit, a method for simultaneously completing the formation of a contact, an interconnect, a gate and a source or drain is disclosed. An integrated circuit field effect structure wherein a diffused silicon area is connected directly to a polysilicon member by conductive silicon and more specifically the source or drain of one device is directly and continuously connected to the gate of an adjacent device by a conductive silicon member.