| 发明名称 |
FORMING METHOD OF PLASMA CVD FILM |
| 摘要 |
PURPOSE:To obtain CVD films of good stability by performing pretreatment of wafer surfaces withinthe same bell-jar to beforehand activate the surfaces, and in succession growing Si3N4 films continuously. |
| 申请公布号 |
JPS5419662(A) |
申请公布日期 |
1979.02.14 |
| 申请号 |
JP19770084251 |
申请日期 |
1977.07.15 |
| 申请人 |
HITACHI LTD |
发明人 |
SUGAWARA KATSUO;SAKAI HIDEO |
| 分类号 |
C01B21/068;C23C16/02;C23C16/50;C23C16/509;H01L21/31 |
主分类号 |
C01B21/068 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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