发明名称 |
FABRICATING HIGH PERFORMANCE INTEGRATED BIPOLAR AND COMPLEMENTARY FIELD EFFECT TRANSISTORS |
摘要 |
<p>FABRICATING HIGH PERFORMANCE INTEGRATED BIPOLAR AND COMPLEMENTARY FIELD EFFECT TRANSISTORS A method for making dielectrically isolated bipolar and field effect transistors in the same substrate and a semiconductor integrated circuit so-made. The method consists of forming a first region of one conductivity type in a monocrystalline semiconductor substrate on a first type, forming second and third regions having different diffusion rates in the substrate, forming a monocrystalline layer of the other conductivity type, adding impurity to the second region, depositing a dielectric layer over the monocrystalline layer, forming openings in the dielectric layer over the first and third regions and another location in the monocrystalline layer, and depositing a layer of silicon over the dielectric layer and the openings. The impurities in the third region are outdiffused into the monocrystalline region over it to form the channel region of a Field Effect transistor. The regions of the layer of silicon are dielectrically isolated from one another and emitter and base regions of a bipolar transistor are selectively formed in the monocrystalline region over subcollector regions. Source and drain regions for a field effect transistor are formed over the third region and the another location to form both channel types of field effect transistors.</p> |
申请公布号 |
CA1048656(A) |
申请公布日期 |
1979.02.13 |
申请号 |
CA19760255057 |
申请日期 |
1976.06.16 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
MAGDO, INGRID E.;MAGDO, STEVEN |
分类号 |
H01L29/78;H01L21/331;H01L21/76;H01L21/8249;H01L27/06;H01L27/07;H01L27/12;H01L29/04;H01L29/10;H01L29/73;(IPC1-7):01L27/02;01L29/72;01L21/70 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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