发明名称 |
Inverter with improved load line characteristic |
摘要 |
An insulated gate field effect transistor (IGFET) static inverter having an improved load line characteristic is disclosed. The inverter comprises an enhancement mode IGFET active device in a first portion of a semiconductor substrate, having its drain connected to an output node, its source connected to a source potential and its gate connected to an input signal source. The first portion of the substrate is connected to a first substrate potential. A depletion mode IGFET load device is located in a second portion of the semiconductor substrate which is electrically isolated from the first portion. The depletion mode load device has its drain connected to a drain potential and its source, gate and the second portion of the semiconductor substrate all connected to the output node. In this manner, the rise in the source-to-substrate voltage bias during the turn-off transition is eliminated in the depletion mode load device, providing an improved load current characteristic for the inverter. Alternate embodiments are disclosed directed to an all N-channel inverter, an all P-channel inverter, and a complementary inverter consisting of a P-channel load device and an N-channel active device.
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申请公布号 |
US4138782(A) |
申请公布日期 |
1979.02.13 |
申请号 |
US19770851660 |
申请日期 |
1977.11.15 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DE LA MONEDA, FRANCISCO H.;KOTECHA, HARISH N. |
分类号 |
H01L21/033;H01L21/8236;H01L27/088;H01L27/092;H03K19/017;H03K19/0948;(IPC1-7):B01J17/00 |
主分类号 |
H01L21/033 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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