| 摘要 |
<p>A pair of rectifying electrodes (20) are formed on the surface (23) of a semiconductor waveguide device (10) around the waveguide region (18). Rectifying Schottky contacts (22) or p-n junctions (24) can be utilized. A bipolar voltage signal (30) is applied across the rectifying electrodes (20), reducing the voltage and power requirements and producing a bipolar electric field transversely across the waveguide (18). The electrode scheme (20) also provides low microwave loss.</p> |
