摘要 |
A method of preparing crystalline compounds AIVABVIA, wherein AIVA is Si, Ge, Sn, or Pb; and BVIA is S, Se, or Te, which comprises thermal decomposition, at the surface of a substrate heated to a temperature ranging from 250 to 450 DEG C., of an organoelemental compound containing chemically combined elements AIVA and BVIA of the general formula RkAlIVA BmVIAR'n' wherein AIVA is Si, Ge, Sn, or Pb; BVIA is S, Se, or Te; R and R' are hydrogen or an alkyl of 1 to 4 carbon atoms; k = 0-6, 1 = 1-2, m = 1-4, n = 0-4; when 1 = 1, m = 1-4; when 1 = 2, m = 1-2. The method according to the present invention makes it possible to substantially reduce the decomposition temperature of the starting element organic compound at the substrate surface and to obtain the final products which are stoichiometric in the composition thereof. The present invention is useful in the manufacture of semiconductor elements and protective coatings. |
申请人 |
INST KHIMII AN SSSR |
发明人 |
DOMRACHEV G.A.,SU;KHAMYLOV V.K.,SU;BOCHKAREV M.N.,SU;ZHUK B.V.,SU;NESTEROV B.A.,SU;KAVERIN B.S.,SU;KIRILLOV A.I.,SU |