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发明名称
FILM FORMATION METHOD
摘要
PURPOSE:To producer a good-quality thin film by securing an action of the radical atom of auxiliary He, Ne or the mixture gas of these featuring an intense binding force when the plasma deposition is carried out.
申请公布号
JPS5418676(A)
申请公布日期
1979.02.10
申请号
JP19770082966
申请日期
1977.07.13
申请人
HITACHI LTD
发明人
TSUCHIMOTO TAKASHI
分类号
C23C16/34;C23C16/507;H01L21/31
主分类号
C23C16/34
代理机构
代理人
主权项
地址
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