发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PURPOSE:To realize the high speed operation of a circuit without greatly increasing a current consumption by driving the signal wire to the other circuit block or to an I/O cell with a bipolar circuit within the circuit block consisting of an MOS circuit. CONSTITUTION:The internal logic of each circuit block 1 consists of an MOS circuit and where a signal is transmitted from one circuit block 1 to the other circuit block 1 or to an I/O cell 2, the signal wire from the circuit block 1 is connected to the input terminal of a bipolar circuit 3 at the point comparatively near the circuit block 1 and a comparatively long wiring connected to the other circuit block 1 or the I/O cell 2 is connected to the output terminal of the bipolar circuit 3. On a semiconductor integrated circuit, the bipolar circuit can be constituted since a diffusion region is not used for except the wiring block 1, i.e., the wiring region between blocks. Further, except the contact region with a wiring, a polysilicon or metal wiring can be made on the bipolar circuit.
申请公布号 JPS62263671(A) 申请公布日期 1987.11.16
申请号 JP19860107048 申请日期 1986.05.09
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 FUKUI MASAHIRO
分类号 H01L21/8249;H01L21/822;H01L27/04;H01L27/06;(IPC1-7):H01L27/06 主分类号 H01L21/8249
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