Making silicon carbide and silicon carbide so made.

摘要

beta -Silicon carbide and a process for making it by heating together silica and a carbonaceous material at 1350 DEG C to 1550 DEG C. By 1350 DEG C the partial pressure of carbon monoxide must not exceed 0,11 atmospheres and by 1550 DEG C it must be lower than 1,15 atmospheres. The carbonaceous material must be of high reactivity such as coal, rice husks, coconut charcoal and not pure graphite.