发明名称 AVALANCHE PHOTO DIODE
摘要 PURPOSE:To improve speed and sensitivity by making the thickness of a light absorbing layer more than twice the inverse number of absorption coefficient and making the average of impurity concentrations less than about 10<16> atoms/cm<3>.
申请公布号 JPS5416195(A) 申请公布日期 1979.02.06
申请号 JP19770081315 申请日期 1977.07.06
申请人 NIPPON ELECTRIC CO 发明人 TAGUCHI KENKOU;NISHIDA KATSUHIKO
分类号 H01L29/864;H01L31/107 主分类号 H01L29/864
代理机构 代理人
主权项
地址